E13009 Datasheet Pdf
Type Designator: MJE13009
Unisonic Technologies E13009 Datasheet: SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS, E13009 Datasheets, E13009 PDF Download.
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage Vcb : 700 V
Maximum Collector-Emitter Voltage Vce : 400 V
Maximum Emitter-Base Voltage Veb : 9 V
Maximum Collector Current Ic max : 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 160 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO220
MJE13009 Transistor Equivalent Substitute - Cross-Reference Search
MJE13009 Datasheet (PDF)
1.1. mje13009x8.pdf Size:423K _update
MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 主要用于节能灯电路。 High frequency electronic lighting ballast applications.
1.2. mje13009x7.pdf Size:463K _update
MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications . 内部等效
1.3. mje13009z9.pdf Size:232K _update
MJE13009Z9(3DD13009Z9) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25℃) 2.0 W C P (Tc=25℃) 100 W C T 150 ℃ j
1.4. mje13009-3pn.pdf Size:173K _update
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION ·With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;con
1.5. mje13009x9.pdf Size:445K _update
MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN Transistor in a TO-3P Plastic Package. 特征 / Features 快速转换。 High Speed Switching 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications. 内部等效电路 / Equivalent Circuit 引脚排列
1.6. mje13009z8.pdf Size:449K _update
MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications. 内部等æ•
1.7. mje13009g.pdf Size:448K _update
UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid
1.8. mje13009z7.pdf Size:233K _update
MJE13009Z7(3DD13009Z7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25℃) 2.0 W C P (Tc=25℃) 100 W C T 150 ℃ j
1.9. mje13009.pdf Size:451K _motorola
Order this document MOTOROLA by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* *Motorola Preferred Device Designer's? Data Sheet 12 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS The MJE13009 is designed for high–voltage, high–speed power switching inductive 100 WATTS circuits where fall time is critical. They are particularly suited
1.10. mje13009.pdf Size:78K _st
MJE13009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Emitt
1.11. mje13009-d.pdf Size:189K _onsemi
MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http://onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, 12 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN SILI
1.12. mje13009d.pdf Size:183K _utc
UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lights
1.13. mje13009.pdf Size:448K _utc
UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Re
1.14. mje13009-k.pdf Size:440K _utc
UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoi
1.15. mje13009-p.pdf Size:424K _utc
UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoi
1.16. mje13009.pdf Size:272K _kec
SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V
1.17. mje13009f.pdf Size:280K _kec
SEMICONDUCTOR MJE13009F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V
1.18. mje13009.pdf Size:157K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitte
1.19. mje13009f.pdf Size:143K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE13009F DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7?s(Max.)@ IC= 8.0A APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit
1.20. hmje13009a.pdf Size:55K _hsmc
Spec. No. : HE200206 HI-SINCERITY Issued Date : 2002.02.01 Revised Date : 2006.07.04 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay driver
1.21. mje13009a 1.pdf Size:207K _sisemi
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE 系列
1.22. mje13009.pdf Size:206K _sisemi
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009 NPN MJE /MJE SERIES TRANSISTORS MJE13009 NPN MJE 系列æ™
1.23. mje13009a.pdf Size:252K _sisemi
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE 系列
1.24. mje13009zj.pdf Size:450K _blue-rocket-elect
MJE13009ZJ(BR3DD13009ZJ) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220S 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220S Plastic Package. 特征 / Features 高电压，大电流。 High VCEO High IC. ， 用途 / Applications 用于高频电子照明电路。 High frequency electronic lighting ballast applications. 内部等效电路 / Equ
Datasheet: MJE13002, MJE13003, MJE13004, MJE13005, MJE13006, MJE13007, MJE13007A, MJE13008, MPSA42, MJE13070, MJE13071, MJE1320, MJE15028, MJE15029, MJE15030, MJE15031, MJE16002.
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BJT: 2SA1897 KRC664E KRC663E SMUN5335DW MP1526 3DD5287 E3150 3DD2499 3DD4212DT 2SC9014 US6H23 UMH9NFHA UMH8NFHA UMH6NFHA UMH5NFHA UMH4NFHA UMH3NFHA UMH33N UMH32N UMH2NFHA
E13009 Datasheet, PDF - Alldatasheet Electronic Components Datasheet Search Selected language Part Name Description E13009 Datasheet, PDF Shortcut E13009 81 recommended datashdet. All Rights Reserved© 2003 - 2016 Mirror Sites English :Chinese : German : Japanese : Russian :. It is mounted in Jedec TO-220 plastic package, intended for use e13009 datasheet pdf motor controls, switching regulators, deflection circuits, etc. Product Specification Shenzhen SI Semiconductors Co. Product Specification Shenzhen SI Semiconductors Co. HIGH SPEED DC-DC CONVERTER APPLICATION. BJT, POWER MOSFET, IGBT, IC, TRIACS CATALOG MJE13009 Transistor E13009 datasheet pdf Datasheet.Transistor E13009 Datasheet Pdf
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E13009 datasheet pdf - keys let
Product Specification Shenzhen SI Semiconductors Co. HIGH SPEED DC-DC E13009 datasheet pdf APPLICATION. Data Sheet 12 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS The MJE13009 is designed for high?voltage, high?speed power switching inductive 100 Vhd resizer tool circuits where fall time is critical. It is characterized by high breakdown voltage, high current capability, high switching speed and dstasheet reliability.E13009 datasheet pdf - tiny
Product Specification Shenzhen SI Semiconductors Co. HIGH SPEED DC-DC CONVERTER APPLICATION. The UTC MJE13009D is intended to be used in a energy-saving lights 1.E13009 Datasheet, PDF - Alldatasheet Electronic Components Datasheet Search Selected language Part Name Description E13009 Datasheet, PDF Shortcut E13009 81 e13009 datasheet pdf result. HIGH VOLTAGE SWITCHING APPLICATION. The UTC MJE13009D is intended to be used in a e13009 datasheet pdf lights 1. Product Specification Shenzhen SI Semiconductors Co. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoi 1.
HIGH E13009 datasheet pdf Pef CONVERTER APPLICATION. Product Specification Shenzhen SI Semiconductors Co. Product Specification Shenzhen SI Semiconductors Co. All Rights Reserved© 2003 - 2016 Mirror SitesEnglish :Chinese : German : Japanese : Russian : Korean : Spanish : French : Italian : Portuguese : Polish :. BuyNow Link URL Does ALLDATASHEET help your business so far?
E13009 datasheet pdf Download Click to view Fatasheet Size 43. Data Sheet 12 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS The MJE13009 is designed for high?voltage, high?speed power switching inductive 100 WATTS circuits where fall time is critical. HIGH SPEED DC-DC CONVERTER APPLICATION. E13009 datasheet pdf Rights Reserved© 2003 - 2016 Mirror SitesEnglish :Chinese : German : Japanese : Russian : Korean : Spanish : French : Italian : Portuguese : Polish :. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability.